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Silicon Carbide and Related Materials: Proceedings of the

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silicon carbide insulating material: (United

Method for forming fibrous silicon carbide insulating material: (United States Department of Energy, USA) GB 2 147 890 A (22 May 1985)

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United Silicon Carbide Inc., New Brunswick, NJ, USAdoi:10.1049/el:200108504H-SiC merged PiN/Schottky diodes were characterised in an inductively-loaded

STPSC6H12 - 1200 V, 6 A High Surge Silicon Carbide Power

characterization of highly resilient monolithic silicon carbide (SiC) neural Unlike current state-of-the-art implantable neural devices with macro-

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Tape-Wrapped Carbon / Silicon Carbide Composites for Launch

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absorption and hyperbolic excitons in silicon carbide of 6

exciton-phonon absorption and hyperbolic excitons in silicon carbide of the 1S exciton state with an M1-type dispersion law were detected in

N-channel Silicon Carbide Power MOSFET for Automotive_SCT3040

ORR Activity and Stability of Co-N/C Catalysts Based on Silicon Carbide the studied catalyst materials: C (1), Bipyr/C (2), Co-Phen/C (3)

of the Fundamental Current Mechanisms in Silicon Carbide

Attempts to model the current through Schottky barrier diodes using silicon carbide Schottky barrier diodes over a large temperature and

Fuji Silicon Carbide (SiC) | The Rod Room

SiC has been the gold standard of guide ring material for over 20 years. Its the best heat dissipating ring in Fujis lineup and because of this

of silicon carbide fibers: (United States

Preparation of silicon carbide fibers: (United States Department of Energy, USA) GB 2 147 891 A (22 May 1985)doi:10.1016/0010-4361(85)90379-9

additions in pressure assisted sintered silicon carbide

how the amount of carbon and boron carbide added effects the density, phase composition and mechanical properties of pressure-sintered silicon carbide

Synthesis of Silicon Carbide Through the Sol–Gel Process

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silicon carbide whiskers: (United States

Prealloyed catalyst for growing silicon carbide whiskers: (United States Department of Energy, USA) GB 2186 208 A (12 August 1987)

carbon nanotubes and silicon carbide nanoparticles on the

In this study, the deleterious influence of hot deionized water on adhesively bonded joints was reduced with silicon carbide (SiC) nanoparticles and multi

| Growth and Self-Assembly of Silicon–Silicon Carbide

This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures

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(PL) and steady-state PL excitation (PLE) measurements to study the size dependent optical properties of ultrasmall silicon carbide (SiC)

+ High Voltage Pulsers in Silicon and SiC Silicon Carbide

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- Edge termination structures for silicon carbide devices

An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon

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