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N-channel Silicon Carbide Power MOSFET for Automotive_SCT3160

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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR

A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer b30;/b a plurality of p-type well regions

US Patent Application for Stop-On Silicon Containing Layer

Justia Patents US Patent Application for Stop-On Silicon Containing Layer to silicon nitride, silicon oxide, silicon carbide, and combinations thereof

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US6347446B1 - Method of making silicon carbide-silicon

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A

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10,211,310 issued February 19, 2019) - Justia Patents Search

Provided are methods and systems for providing oxygen doped silicon carbide. A layer of oxygen doped silicon carbide can be provided under process conditions

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US Patent for Silicon carbide substrate Patent (Patent # 10,

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

US6514779B1 - Large area silicon carbide devices and

A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

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Silicon carbide-boron carbide sintered body - Google Patents

ABSTRACT OF THE DISCLOSURE A particulate mixture of .beta. -silicon carbide, boron carbide and a carbonaceous additive is formed into a green body and

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Ceramic Foams (Silicon Carbide, Aluminum Oxide, Zirconium

DUBLIN, May 25, 2018 /PRNewswire/ -- The Ceramic Foams Market by Type (Silicon Carbide, Aluminum Oxide, Zirconium Oxide), Application (

US9837270B1 - Densification of silicon carbide film using

Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote

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US Patent Application for SILICON CARBIDE SEMICONDUCTOR

A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor

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- Methods of fabricating delta doped silicon carbide metal

of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure - Google Patents

MANUFACTURING METHOD OF SILICON CARBIDE-BASED HONEYCOMB

A manufacturing method of a silicon carbide-based honeycomb structure, including a firing step of introducing extruded honeycomb formed bodies containing a

- STMicroelectronics

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